Infineon N-Channel Power MOSFET, 55V, 17A, 0.07 Ohm, TO-220AB

The Infineon N-Channel Power MOSFET is a robust and high-performance single HEXFET® power transistor, engineered using advanced process technology for superior reliability in demanding electronic applications. It offers a dynamic dv/dt rating and fast switching capabilities, making it an efficient choice for power conversion circuits. The device is fully avalanche rated, enhancing its durability against voltage spikes, and features a planar cell structure that provides a wide safe operating area (SOA), ensuring stable performance under varied load conditions.

This MOSFET is product-qualified according to the stringent JEDEC standard, guaranteeing consistent quality and increased ruggedness for industrial use. Its high-current rating and capability make it exceptionally well-suited for high-power, low-frequency applications where reliable current handling is critical. The through-hole TO-220AB package facilitates easy mounting and efficient heat dissipation via an external heatsink, supporting a maximum power dissipation of 45W.

Key Specifications & Features

• Channel Type: N-Channel
• Drain-Source Voltage (Vds): 55 V
• Continuous Drain Current (Id): 17 A
• Drain-Source On-State Resistance (Rds(on)): 0.07 Ω (tested at 10V)
• Gate-Source Threshold Voltage (Max): 4 V
• Maximum Power Dissipation: 45 W
• Package / Case Style: TO-220AB
• Mounting Type: Through Hole
• Pin Count: 3 Pins
• Maximum Operating Temperature: 175 °C
• Dimensions (approx.): 43mm (Height) x 33mm (Width) x 15mm (Depth)
• Weight: Approximately 5.44 grams

Ideal for designers and engineers, this component provides high performance, increased ruggedness, and reliable operation in power supply units, motor drivers, amplification circuits, and other high-current switching applications.