Infineon N Channel Power MOSFET, 60V 81A 0.012 Ohm TO-220AB

The Infineon N Channel Power MOSFET utilises advanced processing techniques to achieve exceptionally low on-resistance per silicon area. This component combines low on-resistance with fast switching speed and a ruggedised device design, providing a highly efficient and reliable solution for a wide variety of applications.

Featuring planar MOSFET technology, this power MOSFET is fully avalanche rated and includes a dynamic dv/dt rating. It supports a gate to source voltage of ±20V and offers a continuous drain current of 81A with a drain source voltage of 60V. The low thermal resistance of 0.75°C/W (junction to case) and 62°C/W (junction to ambient) ensures effective heat management during demanding operation.

Designed for through-hole mounting, the transistor comes in a TO-220AB case style with 3 pins. It operates at temperatures up to 175°C and features a power dissipation of 170W. The compact dimensions of 43 mm in height, 33 mm in width, and 15 mm in depth, alongside a lightweight build of just 2.712 grams, make it suitable for dense circuit board layouts.