Infineon N-Channel Power MOSFET 650V 47A TO-247

The Infineon N-Channel Power MOSFET is a high-performance component designed using CoolMOS™ technology to deliver superior efficiency and power density in demanding applications. With a voltage rating of 650V and a continuous drain current of 47A, it is engineered to handle significant power loads while minimising energy loss. Its low specific on-state resistance of 0.07 ohm is key to reducing conduction, switching, and driving losses, which translates directly into cooler operation and extended system lifespan.

This MOSFET represents the latest generation of high-voltage power technology, enabling the design of AC-DC power supplies that are more efficient, compact, and lighter than ever before. Key performance characteristics include very low energy storage in the output capacitance (Eoss) at 400V and a low gate charge (Qg), both of which contribute to outstanding switching performance and high overall system reliability. Its through-hole TO-247 case style ensures a robust and easy-to-use mounting solution for a wide range of circuit designs.

Key Features & Benefits

• CoolMOS™ Technology: Significantly reduces conduction, switching, and driving losses for enhanced efficiency.
• High Power Density: Enables the design of more compact and lighter power conversion systems.
• Low Rds(on): On-state resistance of just 0.07 ohm minimises power dissipation and heat generation.
• Robust Performance: Rated for a maximum power dissipation of 415W and an operating temperature up to 150°C.
• Optimised Switching: Very low Eoss and Qg parameters ensure fast switching and reduced losses.

Ideal for engineers and designers focused on creating high-efficiency power management solutions, this MOSFET provides the reliability and performance needed for advanced electronic systems.