INFINEON N Channel Power MOSFET HEXFET 200V 50A 0.04 Ohm TO-247AC

The Infineon N Channel Power MOSFET offers robust performance and high efficiency, designed in the widely used TO-247AC package. This HEXFET power MOSFET features an extremely low on resistance per silicon area, which helps to minimise power loss and improve overall circuit efficiency.

With a dynamic dv/dt rating and ease of paralleling, this component is built for demanding applications. It provides rugged, fast switching capabilities alongside simple drive requirements. Furthermore, it is fully avalanche rated, ensuring high reliability and durability even under strenuous operating conditions.

Key Specifications

• Drain to Source Voltage (Vds): 200V
• Continuous Drain Current (Id): 50A
• On Resistance (Rds(on)): 40mohm at Vgs 10V
• Power Dissipation (Pd): 300W at 25°C
• Gate to Source Voltage: ±20V
• Gate Source Threshold Voltage Max: 4V
• Operating Junction Temperature Range: -55°C to 175°C
• Number of Pins: 3
• Transistor Mounting: Through Hole

Measuring 43 mm in height, 33 mm in width, and 15 mm in depth, with a weight of just 5.67 grams, this power MOSFET is suitable for compact yet high-power designs requiring dependable thermal and electrical performance.