INFINEON OptiMOS 5 Power MOSFET, N-Channel, 100A, 25V

The INFINEON OptiMOS 5 Power MOSFET is a high-performance N-channel transistor engineered for demanding power management applications. It is designed using advanced silicon technology to deliver exceptional efficiency and reliability in a compact, surface-mount package.

This MOSFET features a very low on-state resistance (Rds(on)) of just 950 µΩ, which minimises conduction losses and heat generation, making it ideal for high-current switching up to 100A. With a drain-source voltage rating of 25V, it is perfectly suited for low-voltage, high-current circuits commonly found in modern computing, telecoms, and automotive systems.

Key Performance Features

• High Current Handling: Supports a continuous drain current (Id) of 100A.
• Low Power Loss: Ultra-low Rds(on) of 950 µΩ tested at 10V gate-source voltage ensures maximum efficiency.
• Robust Thermal Performance: Capable of dissipating up to 74W of power and operating at junction temperatures up to 150°C.
• Fast Switching: A low gate-source threshold voltage (max 1.6V) allows for efficient, fast switching control.
• Reliable Packaging: Housed in an 8-pin TDSON surface-mount package, designed for excellent thermal dissipation and mechanical stability on printed circuit boards (PCBs).

As part of the renowned OptiMOS 5 family from INFINEON, this component meets the highest standards for quality and is suitable for automated assembly processes, thanks to its MSL 1 (unlimited) moisture sensitivity level.