Infineon OptiMOS P2 P-Channel Power MOSFET, 40V, 90A, TO-252 (DPAK), SMD

The Infineon OptiMOS P2 P-Channel Power MOSFET is a high-performance power transistor in a compact 3-pin TO-252 (DPAK) package, designed for surface-mount applications. This MOSFET delivers a continuous drain current of -90A and a power dissipation of 125W, making it suitable for demanding power switching and management tasks.

Featuring P-channel, normal-level, enhancement-mode technology, this transistor offers efficient and reliable operation. It is AEC qualified (AEC-Q101) and can withstand an operating temperature of up to 175°C, ensuring robust performance in harsh automotive and industrial environments. The device is also 100% avalanche tested for enhanced ruggedness.

Key specifications include a drain-source voltage of 40V, an on-state resistance of 4700µΩ (tested at 10V), and a maximum gate-source threshold voltage of 4V. The TO-252 (DPAK) package is designed for surface mounting, and the device has an MSL rating of 1 (unlimited) for easy handling.

Whether for automotive systems, power supplies, or DC-DC converters, this Infineon MOSFET provides dependable performance and durability in a space-saving SMD format.

Specifications

• Channel Type: P-Channel
• Drain Source Voltage (Vds): 40V
• Continuous Drain Current (Id): -90A
• Drain Source On-State Resistance (Rds(on)): 4700µΩ
• Transistor Case Style: TO-252 (DPAK)
• Mounting Type: Surface Mount
• Rds(on) Test Voltage: 10V
• Gate Source Threshold Voltage Max: 4V
• Power Dissipation: 125W
• No. of Pins: 3
• Operating Temperature Max: 175°C
• Product Range: OptiMOS P2 Series
• Qualification: AEC-Q101
• MSL: MSL 1 - Unlimited