Infineon P Channel Power MOSFET 100V 40A 0.06 ohm TO-220AB

The Infineon P Channel Power MOSFET is a high-performance component designed to deliver exceptional efficiency and reliability. Utilising advanced processing techniques, this device achieves extremely low on-resistance per silicon area, ensuring minimal power loss and optimal performance in demanding circuits.

Key Features

• Advanced Process Technology: Delivers ultra-low on-resistance for superior efficiency
• Fast Switching: Enables rapid state transitions for high-speed applications
• Dynamic dv/dt Rating: Ensures robust performance under dynamic voltage conditions
• Fully Avalanche Rated: Provides enhanced ruggedness and durability

This MOSFET is engineered for demanding applications, particularly within audio and industrial environments, where reliability and efficiency are critical. It features a through-hole mounting style for secure and straightforward PCB integration.

Specifications

• Channel Type: P Channel
• Drain Source Voltage (Vds): 100V
• Continuous Drain Current (Id): 40A
• Drain Source On State Resistance: 0.06 ohm
• Rds(on) Test Voltage: 10V
• Gate Source Threshold Voltage Max: 4V
• Power Dissipation: 200W
• Operating Temperature Max: 175°C
• Number of Pins: 3
• Transistor Case Style: TO-220AB
• Dimensions: 43 mm x 33 mm x 15 mm
• Weight: 2.04 grams