INFINEON P-Channel Power MOSFET 55V 22A TO-251AA

This INFINEON P-Channel Power MOSFET is a single-channel HEXFET® device engineered for high-efficiency power management. It integrates advanced process technology to deliver ultra-low on-resistance (0.065 ohm), ensuring reduced conduction losses and improved thermal performance in your circuits. The transistor is fully avalanche rated and features a dynamic dv/dt rating, providing robust operation in demanding switching applications.

With a drain-source voltage of 55 V and a continuous drain current of 22 A, this MOSFET handles substantial power loads. It offers fast switching characteristics, making it suitable for high-frequency power conversion and control. The through-hole TO-251AA package simplifies PCB mounting and ensures reliable mechanical stability.

Key Specifications

• Channel Type: P Channel
• Drain Source Voltage (Vds): 55 V
• Continuous Drain Current (Id): 22 A
• On-State Resistance (Rds(on)): 0.065 ohm
• Rds(on) Test Voltage: 10 V
• Gate-Source Threshold Voltage (Max): 4 V
• Power Dissipation: 69 W
• Operating Temperature (Max): 175 °C
• Pin Count: 3

To ensure stable operation, this MOSFET is fully avalanche rated, making it resilient against overvoltage transients. Its dynamic dv/dt rating adds extra robustness in harsh switching environments, reducing the risk of unintended turn-on. The device is RoHS compliant and suitable for a variety of power control applications where P-channel switching is required.

This component is designed for engineers seeking a reliable, high-performance P-channel MOSFET in a convenient through-hole package. The combination of low on-resistance, high current capability, and fast switching makes it an excellent choice for power supplies, motor control, and battery management systems. Each unit is delivered in a protective static-free packaging to ensure safe handling and storage.