Infineon Power MOSFET N Channel 60V 1.2A SOT-23

The Infineon IRLML2060TRPBF is an N-channel HEXFET® Power MOSFET designed to deliver lower switch losses and enhanced reliability for modern electronic applications. Engineered for compatibility with existing surface mount techniques, this component offers a practical, space-saving solution for a wide range of power management and industrial applications.

Featuring an industry-standard pinout, this MOSFET ensures ease of integration into your circuit designs. It is qualified to MSL1 (Moisture Sensitivity Level 1) for consumer applications and is constructed with an environment-friendly design. The device provides robust performance with a drain-source voltage of 60 V and a continuous drain current of 1.2 A. With an on-state resistance of 0.48 ohm, it helps to reduce energy losses during operation.

The transistor is housed in a compact SOT-23 package, supporting surface mount assembly. It operates with a maximum power dissipation of 1.25 W and can withstand temperatures up to 150 °C, making it suitable for demanding environments. The gate-source threshold voltage is a maximum of 2.5 V, and the Rds(on) test voltage is 10 V.

Key Specifications

• Channel Type: N Channel
• Drain Source Voltage (Vds): 60 V
• Continuous Drain Current (Id): 1.2 A
• Drain Source On-State Resistance: 0.48 ohm
• Transistor Case Style: SOT-23
• Transistor Mounting: Surface Mount
• Rds(on) Test Voltage: 10 V
• Gate Source Threshold Voltage (Max): 2.5 V
• Power Dissipation: 1.25 W
• No. of Pins: 3
• Operating Temperature (Max): 150 °C

With its reliable performance and compact footprint, the Infineon IRLML2060TRPBF is an excellent choice for engineers seeking an efficient and dependable N-channel MOSFET for their power management needs.