Infineon SPW20N60C3 N-Channel Power MOSFET, 650V 20.7A, TO-247

The Infineon SPW20N60C3 is a high-performance N-Channel Power MOSFET designed using advanced Cool MOS™ technology. This revolutionary high-voltage component offers superior efficiency and reliability for demanding industrial applications. Its ultra-low gate charge minimises switching losses, leading to cooler operation and improved system energy efficiency.

The transistor is periodic avalanche rated and extremely dv/dt rated, providing robust protection against voltage spikes and fast transients, which are common in harsh electrical environments. It is qualified according to stringent JEDEC standards, ensuring consistent performance and durability for its target applications. The device features a high peak current capability and improved transconductance, making it highly responsive and capable of handling significant power surges.

Housed in a standard TO-247 through-hole package, it is designed for easy mounting onto printed circuit boards (PCBs) where high power dissipation is required. With a substantial power dissipation rating of 208W, this MOSFET is built to manage significant thermal loads in continuous operation.

Key Specifications

• Channel Type: N-Channel
• Drain-Source Voltage (Vds): 650 V
• Continuous Drain Current (Id): 20.7 A
• Drain-Source On-State Resistance (Rds(on)): 0.19 Ω (tested at 10V)
• Gate-Source Threshold Voltage (Max): 3 V
• Power Dissipation: 208 W
• Package / Case: TO-247
• Mounting Type: Through Hole
• Pin Count: 3 Pins
• Maximum Operating Temperature: 150 °C

Ideal for power supply units, motor drives, and industrial inverters, the Infineon SPW20N60C3 delivers the rugged performance needed for professional and industrial-grade electronics.