Microchip P-Channel Power MOSFET, 40V 175mA, TO-92 Package

This low threshold, enhancement-mode (normally-off) transistor from Microchip utilises a vertical DMOS structure and a proven silicon-gate manufacturing process. This combination delivers the power handling capabilities of a bipolar transistor while maintaining the high input impedance and positive temperature coefficient inherent in MOS devices.

A key characteristic of this MOS structure is its inherent freedom from thermal runaway and thermally-induced secondary breakdown, ensuring excellent operational stability. It is specifically designed for low-power drive requirements and is easily paralleled for higher current applications.

Key Features & Benefits

• High Input Impedance & Gain: Requires minimal current from the driving circuit.
• Logic-Level Compatible: The gate source threshold voltage makes it suitable for direct interfacing with TTL and CMOS logic circuits.
• Excellent Thermal Stability: The positive temperature coefficient and freedom from secondary breakdown prevent localised overheating.
• Integrated Protection: Features an integral source-drain diode.
• Ease of Use: Designed for straightforward paralleling in designs requiring higher current capacity.

Typical Applications

This P-channel power MOSFET is an ideal component for a wide range of electronic designs, including solid-state relays, battery-operated portable systems, photovoltaic drives, analogue switches, and other low-voltage power management circuits where efficient switching and reliable performance are critical.

Housed in a compact, industry-standard TO-92 through-hole package, it is easy to prototype with and integrates into existing designs. With a maximum power dissipation of 740mW and an operating temperature range up to 150°C, it offers robust performance for demanding applications.