DIODES INC. N Channel Power MOSFET 60V 1.4A SOT-23

The DIODES INC. N Channel Power MOSFET is an enhancement mode device designed for high-efficiency power-management applications. It utilises a unique structure that combines the benefits of low on-resistance with fast switching speed, making it an excellent choice for demanding circuit designs where efficiency and performance are critical.

Featuring a drain-source voltage of 60V and a continuous drain current of 1.4A, this MOSFET delivers reliable power handling. The low on-resistance of 0.25 ohm and low gate charge ensure minimal power loss and efficient operation during switching cycles. It also features a maximum gate-source threshold voltage of 3V and a power dissipation of 806mW. The pulsed drain current is rated at 6.9A, providing robust handling for transient conditions, while the continuous source current (body diode) is rated at 1A.

Housed in a compact SOT-23 surface-mount package with 3 pins, this MOSFET is highly suitable for space-constrained PCB layouts. It operates reliably within a broad temperature range from -55°C to +150°C, ensuring stability in various environmental conditions.

Applications

This N Channel MOSFET is ideally suited for a variety of applications, including DC-DC converters, power-management functions, relay and solenoid driving, and motor controls. Its combination of low resistance and fast switching makes it a versatile component for modern electronics.