N Channel Power MOSFET 60V 20A 0.039 Ohm TO-252 Surface Mount

The ONSEMI N Channel Power MOSFET is a high-performance surface mount device housed in a TO-252 (DPAK) package. Engineered for efficiency and reliability, this MOSFET features high current capability and low RDS(on), which results in minimal conduction losses. The device has been avalanche tested, ensuring robust load performance and providing a reliable safeguard against voltage overstress.

Operating with a drain to source voltage (Vds) of 60V and a continuous drain current (Id) of 20A, this MOSFET is built to handle demanding power applications. It offers a low on-state resistance of 0.039 ohm at a test voltage of 10V. The gate source threshold voltage is a maximum of 1.8V, and it can handle a continuous gate to source voltage of ±20V.

Designed to perform in challenging environments, the component operates within a junction temperature range of -55°C to 150°C. With a power dissipation of 36W and a moisture sensitivity level of MSL 1 (Unlimited), it is highly suitable for a wide variety of demanding applications and uncontrolled environments.

Key Specifications

• Channel Type: N Channel
• Drain Source Voltage (Vds): 60V
• Continuous Drain Current (Id): 20A
• Power Dissipation (Pd): 36W
• Gate Source Threshold Voltage Max: 1.8V
• Drain Source On State Resistance: 0.039 ohm
• Transistor Case Style: TO-252 (DPAK)
• Transistor Mounting: Surface Mount
• No. of Pins: 3

This versatile power MOSFET is an ideal choice for designers working on power management, consumer electronics, portable devices, and industrial systems.