NEXPERIA N Channel Trench Power MOSFET, 30V, 400mA, SOT-23

The NEXPERIA N Channel Trench Power MOSFET is an enhancement mode field effect transistor packaged in a SOT-23 (TO-236AB) surface mount format, utilising advanced TrenchMOS technology. This transistor is engineered for very high-speed switching and features a low threshold voltage alongside robust ESD protection up to 2kV, ensuring reliable operation in sensitive electronic circuits.

Designed for demanding environments, this device is AEC-Q101 qualified, making it fully suitable for automotive applications. It serves effectively as a relay driver, high-speed line driver, and low-side load switch, providing versatile performance across multiple circuit designs.

Key Specifications

• Channel Type: N Channel
• Drain to Source Voltage (Vds): 30V
• Gate to Source Voltage: ±8V
• Continuous Drain Current (Id): 400mA
• Drain Source On State Resistance: 1.4 ohm
• Power Dissipation: 350mW
• Rds(on) Test Voltage: 4.5V
• Gate Source Threshold Voltage Max: 900mV
• Number of Pins: 3
• Operating Temperature Max: 150°C
• Ambient Temperature Range: -55°C to 150°C

With robust performance and reliable switching capabilities, this MOSFET is an excellent choice for power management, consumer electronics, portable devices, industrial, and automotive systems. Its compact surface mount design allows for efficient use of PCB space in modern electronics.