NEXPERIA SMD N Channel MOSFET 30V 6A TO-236AB

The PMV20ENR from NEXPERIA is a high-performance N Channel enhancement mode Field-Effect Transistor (FET) designed for efficient switching and driver applications. Housed in a compact SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, this MOSFET utilises advanced Trench MOSFET technology to deliver very fast switching speeds and low on-state resistance, making it ideal for modern electronic circuits.

With a drain-source voltage rating of 30V and a continuous drain current of 6A, this transistor ensures robust performance in demanding conditions. The low drain-source on-state resistance of just 0.021Ω minimises power losses, enhancing overall circuit efficiency. This component is logic level compatible, allowing direct interfacing with microcontrollers and other low-voltage logic devices without additional driver stages.

The device supports an enhanced power dissipation capability of 1200mW, ensuring reliable operation under various load conditions. Its surface-mounted design facilitates easy integration into automated manufacturing processes, while the 3-pin configuration simplifies circuit layout.

Key Applications

• Ideal for relay drivers, high-speed line drivers, low-side load switches, and general switching circuits

Technical Specifications

• Channel Type: N Channel
• Drain Source Voltage (Vds): 30V
• Continuous Drain Current (Id): 6A
• Drain Source On-State Resistance: 0.021Ω
• Transistor Case Style: TO-236AB
• Mounting Type: Surface Mount
• Rds(on) Test Voltage: 10V
• Gate Source Threshold Voltage (Max): 1.5V
• Power Dissipation: 510mW
• Number of Pins: 3
• Maximum Operating Temperature: 150°C
• Package Type: SOT23

This transistor is supplied in a reel for automated assembly, ensuring convenience for production lines. With its fast switching capability and high efficiency, the N