ON Semiconductor BC856B PNP Dual Transistor Array SOT-363

The ON Semiconductor BC856BDW1T1G is a dual PNP bipolar transistor array engineered for general purpose amplifier applications and low power surface-mount circuits. This component integrates two PNP transistors in a compact SOT-363 package, saving board space while delivering reliable performance for modern electronic designs.

With a collector-emitter voltage rating of -65V and a continuous collector current of -100mA, this transistor array handles a wide range of low-power switching and amplification tasks. It offers a DC current gain (hFE) of 220hFE, ensuring consistent signal amplification, and a transition frequency of 100MHz for efficient high-frequency operation. The device dissipates up to 380mW (PNP), making it suitable for moderate power applications.

The BC856BDW1T1G is halogen-free and operates over a junction temperature range of -55°C to 150°C, providing stability in demanding environments. Its surface-mount SOT-363 package (6 pins) is ideal for automated assembly and space-constrained PCBs.

Typical applications include power management circuits and industrial control systems, where dependable transistor performance is critical. This component is part of the BCxxx series from ON Semiconductor, offering a trusted solution for your electronic projects.

Key Specifications

• Transistor Polarity: Dual PNP
• Collector-Emitter Voltage (PNP): -65V
• Continuous Collector Current (PNP): -100mA
• DC Current Gain (hFE): 220hFE
• Power Dissipation (PNP): 380mW
• Transition Frequency (PNP): 100MHz
• Transistor Case Style: SOT-363
• No. of Pins: 6
• Mounting Type: Surface Mount
• Operating Temperature Range: -55°C to 150°C

This dual transistor array is a practical choice for engineers seeking a compact, high-performance solution for amplification and switching in low-power applications.