ON Semiconductor BC857CLT1G PNP General Purpose Transistor, SOT-23

The ON Semiconductor BC857CLT1G is a PNP general purpose bipolar junction transistor (BJT) engineered for a broad spectrum of linear and switching applications. Its compact SOT-23 surface-mount package is specifically designed for lower power, space-constrained circuits, making it an ideal component for modern, miniaturised electronic designs.

This transistor delivers reliable performance with a collector-emitter voltage (Vceo) of -45V and a continuous collector current of -100mA, paired with a power dissipation rating of 225mW. A key feature is its high DC current gain (hFE) of 420, which ensures efficient signal amplification. Its transition frequency of 100MHz makes it suitable for moderate-speed switching and amplification tasks.

Robustness and Reliability

Manufactured to meet stringent industry standards, the BC857CLT1G is AEC-Q101 qualified and PPAP capable. This certification confirms its suitability for demanding environments, including automotive and industrial applications where consistent performance under varying temperatures and stresses is critical. It operates reliably up to a maximum temperature of 150°C.

Typical Applications

The versatile nature of this transistor allows it to be deployed in numerous circuit functions, from signal amplification and oscillation to load switching and interface logic. Its robust construction and qualification make it a dependable choice for power management systems, control modules, and a wide array of general-purpose electronic circuitry.

Package and Specifications

_ Package Type: SOT-23 (3-pin) _ Mounting Type: Surface Mount _ Polarity: PNP _ Collector-Emitter Voltage (Vceo): -45V _ Continuous Collector Current: -100mA _ Power Dissipation: 225mW _ DC Current Gain (hFE): 420 _ Transition Frequency: 100MHz _ Maximum Operating Temperature: 150°C _ Qualification: AEC-Q101, PPAP Capable