Onsemi FDC6333C Complementary N and P Channel Dual MOSFET Transistor SuperSOT

The Onsemi FDC6333C is a complementary N and P-channel dual MOSFET transistor rated at 30V per channel, housed in a compact SuperSOT package.

Overview

The FDC6333C is produced using the proprietary PowerTrench process. It is designed to balance low on-state resistance (RDS(ON)) with high-speed switching performance, which supports efficient operation in compact electronic designs where power loss and heat generation are key considerations.

The device is supplied in an extremely small SuperSOT footprint with a low-profile design. This makes it suitable for space-constrained applications where larger packages are not practical, and it integrates high current handling into a minimal area to make efficient use of board space.

Key Features

• Complementary N and P-channel configuration for push-pull and other circuit topologies
• Low gate charge for faster switching and reduced drive circuit complexity
• Trench technology for low RDS(ON), reducing energy lost as heat
• Drain-source voltage (Vds) of 30V for both channels
• Robust construction supporting a wide operating temperature range

Applications

Primary applications include DC-to-DC converters, where efficient power conversion is important, load switches for power management, and LCD display inverter circuits. The complementary channel arrangement also provides design flexibility for push-pull and other circuit topologies.

Specifications

• Process Technology: Advanced PowerTrench
• Channel Configuration: Complementary N and P-Channel pair
• Drain-Source Voltage (Vds): 30V for both channels
• Width: 3.3, Depth: 1.5, Height: 4.3 (units not specified)
• Weight: 2 gm

Select the Onsemi FDC6333C when a compact complementary dual MOSFET is required for power management, switching, or DC-to-DC conversion designs in industrial and power management systems.