ON Semiconductor Dual NPN Transistor Array, 65V, 100mA, SOT-363

The ON Semiconductor BC846BDW1T1G is a dual NPN bipolar transistor array designed for general purpose amplifier applications. This component is ideal for low power surface mount applications, offering reliable performance in compact electronic designs.

Key Features

• Dual NPN transistor configuration for versatile circuit design
• AEC-Q101 qualified and PPAP capable for automotive applications
• Halogen-free construction for environmentally conscious manufacturing
• Collector-emitter voltage rating of 65V
• DC collector current of 100mA
• DC current gain of 200hFE
• Power dissipation of 380mW
• Surface mount package in SOT-363 style with 6 pins
• Operating temperature range up to 150°C
• Transition frequency of 100MHz

Applications

This transistor array is suitable for audio applications and power management tasks, where its dual configuration provides design flexibility and space savings. Its AEC-Q101 qualification ensures suitability for automotive environments.

Specifications

• Transistor Polarity: Dual NPN
• Collector Emitter Voltage Max: 65V
• DC Collector Current: 100mA
• DC Current Gain: 200hFE
• Power Dissipation: 380mW
• Transistor Case Style: SOT-363
• No. of Pins: 6
• Mounting Type: Surface Mount
• Operating Temperature Max: 150°C
• Transition Frequency: 100MHz
• Product Range: BCxxx Series

With its compact SOT-363 package and robust specifications, the BC846BDW1T1G is an excellent choice for engineers seeking a reliable dual NPN transistor solution.