ON Semiconductor FDD4685 Power MOSFET P Channel 40V 32A DPAK

The ON Semiconductor FDD4685 is a P-Channel PowerTrench® MOSFET engineered to deliver superior switching performance in a compact surface-mount package. This component is specifically designed to minimize on-state resistance (RDS(on)) and maintain a low gate charge, enabling efficient operation in high-frequency power conversion circuits.

Featuring an advanced shielded-gate structure, the FDD4685 achieves charge balance, significantly improving the figure of merit (FOM) by up to 66% compared to previous-generation devices. The integrated soft recovery body diode reduces voltage spikes, which can eliminate the need for external snubber circuits in synchronous rectification applications. This device is optimized for AC/DC power supplies, offering fast switching with low reverse recovery charge (Qrr).

Key Benefits

• Extremely low drain-source on-state resistance (0.027 ohm) for reduced conduction losses
• Low gate charge (QG) for rapid switching and high efficiency
• Soft body diode minimizes undesirable voltage spikes
• High-performance trench technology for enhanced reliability
• Surface-mount TO-252 (DPAK) package for compact PCB designs
• Suitable for general-purpose power switching applications

Specifications

• Channel Type: P-Channel
• Drain-Source Voltage (Vds): -40V
• Continuous Drain Current (Id): -32A
• Drain-Source On-State Resistance: 0.027 ohm
• Gate-Source Threshold Voltage (Max): 1.6V
• Power Dissipation: 69W
• Operating Temperature (Max): 150°C
• MSL Level: MSL 1 - Unlimited

This MOSFET is a reliable choice for designers seeking high-performance power management in a space-saving package.