ON Semiconductor MJD44H11G NPN Power Transistor, TO-252, 80V 8A
ON Semiconductor MJD44H11G NPN power transistor, 80V 8A 20W in TO-252 package. For switching regulators, converters & audio amps.
The ON Semiconductor MJD44H11G is a robust bipolar NPN power transistor engineered for general-purpose power switching and output driver stages. It delivers reliable performance in demanding applications such as switching regulators, power converters, and audio power amplifiers, combining high efficiency with solid electrical characteristics.
This transistor features a low collector-emitter saturation voltage, which minimises power loss during operation, contributing to greater overall system efficiency. Its fast switching speeds make it an excellent choice for high-frequency switching circuits, ensuring responsive performance in regulator and converter designs.
The device is electrically similar to the popular D44H/D45H series, offering a familiar and reliable upgrade path for existing designs. It is available in both lead-formed versions for surface mount application and straight-lead versions, both supplied in protective plastic sleeves. The availability of complementary PNP pairs (such as the MJD45H11G) simplifies circuit design for push-pull and other symmetrical output stages.
Manufactured to high automotive-grade standards, the MJD44H11G is AEC-Q101 qualified and PPAP capable, making it suitable for use in automotive and other rigorous industrial environments where component reliability is critical.
Key Specifications
- Transistor Type: NPN Bipolar Junction Transistor (BJT)
- Maximum Collector-Emitter Voltage (VCEO): 80 V
- Continuous Collector Current (IC): 8 A
- Power Dissipation (PD): 20 W
- DC Current Gain (hFE): 60 (Min)
- Transition Frequency (fT): 85 MHz
- Package / Case: TO-252 (DPAK), Surface Mount
- Pin Count: 3
- Operating Temperature Range: Up to 150°C
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