
ON Semi N-channel MOSFET: 60V, 500mA, SOT-23. AEC-Q101 qualified, low on-resistance, for automotive & power apps.
The ON Semiconductor MMBF170LT1G is a high-quality N-channel Power MOSFET designed for a wide range of switching and amplification applications. With a drain-source voltage of 60V and a continuous drain current of 500mA, this component delivers reliable performance in compact, space-constrained designs.
The transistor features a low drain-source on-state resistance of 5 ohms (at a test voltage of 10V), ensuring efficient power handling and reduced losses. It is housed in a space-saving SOT-23 package, ideal for surface-mount assembly processes. With a power dissipation of 225mW and an operating temperature range up to 150°C, this MOSFET is built to perform under demanding conditions.
This component is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications where high reliability and traceability are critical. The gate-source threshold voltage is a maximum of 3V, allowing for easy drive from low-voltage logic levels.
Key Features
The ON Semiconductor MMBF170LT1G is an excellent choice for engineers and designers seeking a dependable MOSFET for automotive, industrial, or consumer electronic circuits.
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