ON Semiconductor NTR2101PT1G P-Channel MOSFET, SOT-23, 8V, 3.7A
ON Semi P-channel MOSFET in SOT-23, 8V, 3.7A, low RDS(on). Ideal for DC-DC converters, load switches, and more.
The ON Semiconductor NTR2101PT1G is a P-channel small-signal MOSFET designed for efficient power management in compact electronic devices. With a drain-source voltage of -8V and a continuous drain current of -3.7A, this transistor delivers reliable performance for a wide range of applications.
Utilising leading Trench technology, it achieves a low drain-source on-state resistance of just 0.052Ω, ensuring high efficiency and reduced power loss. The device is rated for low-voltage gate drive at -1.8V, making it compatible with modern low-power control circuits.
Housed in a space-saving SOT-23 surface-mount package, the MOSFET occupies a minimal footprint of only 3 x 3mm, ideal for dense PCB layouts. It operates across a junction temperature range of -55°C to 150°C, ensuring stability in demanding environments.
Key Features:
- P-channel enhancement mode MOSFET
- Low RDS(on) of 0.052Ω at VGS = 4.5V
- Low gate drive requirement (1V threshold max)
- Surface-mount package for automated assembly
- Power dissipation of 960mW
- 3-pin configuration
This MOSFET is an excellent choice for power management, computing, consumer electronics, and industrial applications where space and efficiency are critical. Its robust design and high-temperature tolerance make it a dependable component for your designs.
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