ON Semiconductor P-Channel Power MOSFET 60V 12A, TO-252 (DPAK), Surface Mount

The ON Semiconductor NTD2955T4G is a high-performance P-Channel Power MOSFET, specifically engineered to handle high energy in avalanche and commutation modes. This component is ideal for low voltage, high speed switching applications, including power supplies, converters, and power motor controls. Its robust design ensures reliable operation in demanding environments, making it a preferred choice for engineers seeking efficiency and durability.

This MOSFET excels in bridge circuits where diode speed and commutating safe operating areas are critical. It offers an additional safety margin against unexpected voltage transients, enhancing system stability. With an avalanche energy specification, this device can withstand stringent stress conditions, ensuring long-term reliability.

Key features include a drain-source voltage of 60V, a continuous drain current of 12A, and a low on-state resistance of 0.155 ohms, optimizing power efficiency. The gate-source threshold voltage is a maximum of 2.8V, and the device can dissipate up to 55W of power. It operates at temperatures up to 175°C, making it suitable for high-temperature applications.

The transistor comes in a TO-252 (DPAK) package and is surface mountable, facilitating integration into compact circuit boards. It has 4 pins for secure connections. The thermal resistance from junction to case is 2.73°C/W, ensuring effective heat dissipation.

Applications include power management and motor drive control. Whether used in industrial or consumer electronics, this MOSFET provides dependable switching performance and contributes to the overall resilience of your circuit design.