ON Semiconductor Power MOSFET, N-Channel, 600V, 23.5A, TO-3P

The ON Semiconductor Power MOSFET is a high-performance N-Channel metal-oxide-semiconductor field-effect transistor designed for robust power switching applications. With a drain-source voltage (Vds) rating of 600V and a continuous drain current (Id) of 23.5A, it is capable of handling significant power loads efficiently. Its low drain-source on-state resistance (Rds(on)) of 0.24ohm at a 10V test voltage ensures minimal conduction losses, leading to improved energy efficiency and reduced heat generation in your circuits.

Housed in a rugged TO-3P through-hole package, this MOSFET offers excellent thermal performance and mechanical stability, making it suitable for demanding industrial environments. The device features a maximum gate-source threshold voltage of 3V, facilitating easy interface with standard logic-level drivers. With a high power dissipation capability of 310W and an operational temperature range extending up to 150°C, it is built for reliability under strenuous conditions.

Key Features & Specifications

• Channel Type: N-Channel
• Voltage Rating: 600V Drain-Source (Vds)
• Current Rating: 23.5A Continuous Drain Current (Id)
• Low On-Resistance: 0.24ohm Rds(on) @ 10V
• High Power Handling: 310W Power Dissipation
• Package: TO-3P, 3-Pin Through-Hole
• Thermal Performance: Maximum Operating Temperature of 150°C
• Drive Voltage: Max Gate-Source Threshold Voltage of 3V

This component is a fundamental building block for power electronics, providing the switching muscle needed in a wide array of applications from motor drives to power supplies.