ONSEMI 2N7002WT1G N-Channel Power MOSFET, 60V, 340mA, SOT-323

The ONSEMI 2N7002WT1G is a highly efficient N-channel small-signal Power MOSFET designed for low-power electronic applications. It delivers robust performance with a 60V drain-source voltage and a continuous drain current of 340mA, making it a reliable component for managing power in compact circuits.

This MOSFET is characterised by its low drain-source on-state resistance (RDS(ON)), which enhances efficiency and minimises power loss. Packaged in a small-footprint SOT-323 surface-mount format, it is ideal for space-constrained designs on printed circuit boards (PCBs). The device is also halogen-free and features built-in electrostatic discharge (ESD) protection, contributing to safer manufacturing and improved long-term reliability.

With an extensive operating junction temperature range from -55°C to 150°C, this component is built to perform consistently in demanding environments. Its combination of low power dissipation, high voltage tolerance, and compact size makes it an excellent choice for modern, miniaturised electronics.

Key Applications

• Low-Side Load Switching: Perfect for controlling power to peripheral components.
• Level Shift Circuits: Enables voltage translation between different logic families.
• DC-to-DC Converters: Provides efficient power conversion in step-up or step-down regulators.
• Portable & Consumer Devices: Ideal for smartphones, digital cameras, PDAs, and other battery-powered gadgets.
• Industrial Power Management: Suitable for control systems and automation where reliable switching is critical.

Engineers and designers will appreciate the 2N7002WT1G for its balance of performance, size, and reliability, making it a versatile foundation for a wide array of electronic designs.