ONSEMI 4N35S-M Optocoupler, 6-Pin SMD DIP, 60mA, 7.5kV

The ONSEMI 4N35S-M is a highly reliable 6-pin general-purpose phototransistor optocoupler. It consists of a gallium arsenide infrared emitting diode optically coupled to a silicon phototransistor, providing excellent electrical isolation while effectively transferring signals. This surface-mount DIP component is an ideal choice for a wide variety of electronic switching and isolation applications.

Featuring a forward current of up to 60mA and an impressive isolation voltage of 7.5kV, this optocoupler ensures robust performance in demanding environments. With a minimum current transfer ratio (CTR) of 100%, it guarantees efficient signal transmission. It is highly suitable for interfacing digital logic inputs and microprocessor inputs, ensuring secure communication between different voltage domains.

Key Performance Characteristics

• Maximum working insulation voltage: 850V
• Highest allowable over-voltage: 6000V
• Wide operating temperature range: -40°C to +100°C
• Collector Emitter Voltage (V(br)ceo): 30V

This versatile component is specifically engineered for power management and industrial applications where critical signal isolation is required. Its compact surface-mount design allows for efficient use of PCB space, ensuring seamless integration into your circuit layouts.