ONSEMI BDX53CG NPN Darlington Transistor TO-220

The ONSEMI BDX53CG is a robust NPN bipolar medium-power Darlington transistor, engineered for general-purpose and low-speed switching applications. Its monolithic construction integrates built-in base-emitter shunt resistors, ensuring stable performance and reduced component count in your circuits. This complementary device is designed for industrial and power management roles, offering a balanced combination of power handling and switching efficiency.

With a collector-emitter voltage of 100V, a power dissipation of 65W, and a DC collector current of 8A, this transistor is well-suited for demanding tasks. The DC current gain of 750hFE provides reliable amplification and switching capabilities. Housed in a standard TO-220 package with three pins, it is designed for through-hole mounting, simplifying assembly and heat sinking. The device operates reliably up to a maximum temperature of 150°C, making it a dependable choice for various environments.

Key Features

• NPN bipolar medium-power Darlington configuration.
• Monolithic construction with built-in base-emitter shunt resistors.
• Complementary device pairing for balanced circuit design.
• High current gain (hFE: 750) for efficient control.
• Through-hole TO-220 package for easy PCB integration.

Typical Applications

• Industrial control systems
• Power management circuits
• General-purpose switching loads

This transistor delivers reliable performance and is a practical choice for engineers and hobbyists alike.