ONSEMI BSS84LT1G P-Channel Power MOSFET 50V 130mA SOT-23

The ONSEMI BSS84LT1G is a high-quality P-channel Power MOSFET designed for efficient power management in modern electronic circuits. This surface-mount device, qualified to AEC Q101 and PPAP capable, ensures reliability for automotive and industrial applications where rigorous standards are required.

With a drain-source voltage of 50V and a continuous drain current of 130mA, this MOSFET is ideal for DC-DC converters and load switching tasks. Its low on-state resistance of 10Ω at a 5V gate drive ensures minimal power losses, making it perfect for battery-powered and energy-sensitive devices. The SOT-23 package allows for compact PCB designs while delivering excellent thermal performance, with power dissipation up to 225mW and an operating temperature range up to 150°C.

Key Features

• P-Channel MOSFET for efficient high-side switching
• AEC Q101 qualified for automotive use
• PPAP capable for production part approval
• Surface mount SOT-23 package for automated assembly
• Low threshold voltage (max 2V) simplifies drive circuitry

Applications

This versatile MOSFET is suitable for a wide range of uses, including power management circuits in communication systems, networking equipment, computers, and computer peripherals. Its robust design and small footprint make it a preferred choice for engineers seeking reliable switching solutions in space-constrained designs.

Specifications:

• Channel Type: P Channel
• Drain Source Voltage Vds: 50V
• Continuous Drain Current Id: 130mA
• Drain Source On State Resistance: 10 ohm
• Transistor Case Style: SOT-23
• Transistor Mounting: Surface Mount
• Rds(on) Test Voltage: 5V
• Gate Source Threshold Voltage Max: 2V
• Power Dissipation: 225mW
• No. of Pins: 3 Pins
• Operating Temperature Max: 150°C

The BSS84LT1G provides the performance and durability needed forv