ONSEMI Dual NPN BRT Digital Transistor 50V 100mA 10kohm

The ONSEMI Dual NPN Bipolar Digital Transistor is a Bias Resistor Transistor (BRT) engineered to replace a single device and its external resistor bias network. This innovative component integrates a single transistor with a monolithic bias network that consists of two resistors: a series base resistor and a base-emitter resistor. By integrating these individual components into one device, the BRT significantly simplifies circuit design, reduces overall board space, and minimises the component count on your PCB.

This digital transistor is highly suited for industrial applications and power management systems, providing reliable performance where space and efficiency are critical. The dual NPN configuration operates with a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. It features a base input resistor (R1) and a base-emitter resistor (R2), both rated at 10 kohm.

Designed for surface mounting, this transistor comes in a compact SOT-363 case style with 6 pins. It supports a power dissipation of 385mW and can operate at temperatures up to 150°C, with a minimum DC current gain (hFE) of 35. The component measures 43 mm in height, 33 mm in width, and 15 mm in depth, with a lightweight profile of just 0.006 grams, making it an optimal choice for dense and demanding electronic assemblies.