ONSEMI FDC604P P-Channel MOSFET 20V 5.5A, SuperSOT

The ONSEMI FDC604P is a high-performance P-channel power MOSFET engineered using an advanced low-voltage PowerTrench® process. It is specified for operation at just 1.8V, making it an exceptionally efficient component for modern, power-sensitive designs. This device is highly optimised for demanding applications such as battery power management, load switching, and protection circuits, where low power loss and high reliability are critical.

A key advantage of this MOSFET is its extremely low on-state resistance (RDS(ON)) of just 0.033ohm at a 4.5V gate drive. This is achieved through the proprietary high-performance Trench technology, which minimises conduction losses and improves overall system efficiency. The component also boasts a fast switching speed, further enhancing its suitability for high-frequency power conversion and switching tasks.

Key Features & Applications

• Optimised for Low Voltage: Specifically designed for 1.8V gate drive, perfect for battery-powered and portable electronics.
• Extremely Low RDS(ON): Delivers minimal power loss and heat generation, maximising battery life and thermal performance.
• Fast Switching: Enables efficient high-frequency operation in power management circuits.
• Robust Construction: Packaged in a compact SuperSOT-6 surface-mount case, suitable for automated PCB assembly and space-constrained layouts.
• High Current Handling: Capable of a continuous drain current (Id) of up to 5.5A.

With a high maximum operating temperature of 150°C and a power dissipation rating of 1.6W, this MOSFET is built for durability and stable performance in challenging environments. Its surface-mount SuperSOT package offers excellent thermal characteristics and a small footprint, making it an ideal choice for modern, compact electronic designs.