ONSEMI FDN327N N-Channel Power MOSFET 20V 2A SuperSOT

The ONSEMI FDN327N is a robust N-Channel Power MOSFET engineered using the high-voltage PowerTrench® process, specified for 20V applications. This advanced transistor is specifically optimised for efficient power management and load switching tasks, offering exceptional performance in compact electronic designs.

A key advantage of this MOSFET is its fast switching speed, facilitated by a typical low gate charge of just 4.5nC. This characteristic makes it highly suitable for applications requiring rapid on/off cycling, helping to minimise power losses and improve overall system efficiency. The device is presented in a space-saving SuperSOT surface-mount package, ideal for modern, high-density PCB layouts.

Core Specifications _ Channel Type: N Channel _ Drain-Source Voltage (Vds): 20 V _ Continuous Drain Current (Id): 2 A _ Drain-Source On-State Resistance (Rds(on)): 0.07 ohm (tested at 4.5V) _ Gate-Source Threshold Voltage (Max): 700 mV _ Power Dissipation: 500 mW _ Package / Case Style: SuperSOT _ Mounting Type: Surface Mount _ Number of Pins: 3 Pins _ Maximum Operating Temperature: 150 °C

With its combination of low on-resistance, high current capability, and swift switching, the FDN327N provides a reliable and efficient solution for controlling power pathways in a wide array of electronic circuits.