ONSEMI FDN352AP P-Channel MOSFET, 30V 1.3A, SuperSOT

The ONSEMI FDN352AP is a P-channel logic level MOSFET engineered with advanced Power Trench® technology. This process is specifically tailored to deliver an extremely low on-state resistance while maintaining low gate charge, resulting in superior switching efficiency and performance.

This device is exceptionally well-suited for low-voltage and battery-powered applications where minimising in-line power loss is critical. Its compact SuperSOT surface mount package allows for high-performance solutions in space-constrained designs, making it ideal for modern portable electronics and power management systems.

Key Features & Benefits

• Advanced Power Trench Technology: Provides extremely low RDS(ON) for reduced conduction losses and higher efficiency.
• Logic Level Gate Drive: Ensures compatibility with modern low-voltage microcontroller and logic circuits for easy integration.
• Low Gate Charge: Enables fast switching speeds, which is essential for high-frequency applications, helping to reduce switching losses.
• Compact SuperSOT Package: The small surface-mount footprint saves valuable PCB space in dense electronic assemblies.
• High Reliability: Designed for robust performance with a maximum operating temperature of 150°C, ensuring stability in demanding environments.

With its optimal balance of low resistance and efficient switching, the FDN352AP is a reliable choice for designers looking to enhance power efficiency and extend battery life in their applications.