ONSEMI FDN5618P P-Channel Power MOSFET, 60V, 1.25A, SuperSOT-23

The ONSEMI FDN5618P is a high-performance, surface-mount, P-channel logic-level PowerTrench MOSFET, engineered for superior switching efficiency. Encased in a compact SuperSOT-23 package, this transistor utilises advanced PowerTrench process technology, which is specifically tailored to minimise on-state resistance while maintaining low gate charge. This results in excellent power efficiency and thermal performance, making it an ideal choice for demanding electronic circuits.

Designed for reliability in power management, the device features a drain-to-source voltage (Vds) of -60V and a continuous drain current (Id) of -1.25A. Its low on-state resistance of 185mΩ at Vgs -4.5V ensures minimal power loss during operation, contributing to cooler running and longer system lifespan. With a robust power dissipation rating of 500mW and an extensive operating junction temperature range from -55°C to 150°C, this MOSFET is built to perform consistently in harsh environmental conditions.

Key Features & Applications

This high-performance component is perfectly suited for modern DC-DC converters, load switching circuits, and a wide array of power management applications. Its logic-level gate drive compatibility simplifies design integration, allowing for direct control from microcontrollers or other low-voltage logic circuits. The use of trench technology guarantees extremely low Rds(ON), which is critical for maximising battery life in portable devices and improving the overall efficiency of power supplies.

Specifications at a Glance

• Channel Type: P-Channel
• Drain-Source Voltage (Vds): 60V
• Continuous Drain Current (Id): 1.25A
• On-State Resistance (Rds(ON)): 185mΩ @ Vgs=-4.5V
• Gate Threshold Voltage: Max 1.6V
• Power Dissipation (Pd): 500mW
• Package Type: SuperSOT-23 (Surface Mount)
• Operating Temperature Range: -55°C to +