ONSEMI FDP18N50 Power MOSFET N Channel 500V 18A TO-220

The ONSEMI FDP18N50 is a 500V N-channel UniFET™ MOSFET, engineered with advanced planar stripe and DMOS technology to deliver superior performance in a wide range of power switching applications. This component is specifically designed to minimise on-state resistance, enhance switching performance, and provide high avalanche energy strength, ensuring reliable operation under demanding conditions.

One of the standout features of this MOSFET is its enhanced body diode, achieved through lifetime control in the UniFET FRFET® series. With a reverse recovery time (trr) of less than 100ns and reverse dv/dt immunity of 15V/ns—compared to over 200ns and 4.5V/ns for standard planar MOSFETs—this device significantly improves system reliability and can eliminate the need for additional components in circuits where body diode performance is critical.

Key Features:

• N-Channel MOSFET
• Drain-Source Voltage (Vds): 500V
• Continuous Drain Current (Id): 18A
• Drain-Source On-State Resistance: 0.265Ω
• Low gate charge for efficient switching
• 100% avalanche tested for ruggedness
• TO-220 package with through-hole mounting for easy PCB integration
• Operating temperature up to 150°C
• Power dissipation: 235W

Applications:

This MOSFET is ideal for switching power converter applications, including power factor correction (PFC), flat panel display (FPD) TV power supplies, ATX power supplies, and electronic lamp ballasts. It is also suitable for general power management and lighting applications, offering versatility and high performance across various electronic designs.