ONSEMI FOD817A3SD Phototransistor Optocoupler, 1-Channel, 50mA, 5kV, 80% CTR

The ONSEMI FOD817A3SD is a compact and reliable 1-channel, 4-pin phototransistor optocoupler, designed for surface-mount applications. It integrates a gallium arsenide infrared emitting diode with a silicon phototransistor, providing a robust and efficient solution for electrical isolation and signal transfer between circuits.

A key feature is its high isolation voltage of 5kV, ensuring safe and reliable operation in environments where voltage separation is critical. With a high current transfer ratio (CTR) of 80% minimum, it delivers efficient signal coupling. The device is engineered for a forward current of up to 50mA and guarantees a minimum collector-emitter voltage (BVCEO) of 70V.

Applications

This optocoupler is ideally suited for modern electronics requiring galvanic isolation. Its primary uses include power supply regulators, where it provides feedback loop isolation, and digital or microprocessor input interfaces, protecting sensitive logic from high-voltage lines. It is also a fundamental component in industrial control systems and power management circuits, ensuring signal integrity and safety.

Packaged in a surface-mount DIP (Dual In-line Package), it facilitates automated assembly processes while offering a familiar footprint. The high allowable overvoltage rating and a maximum working insulation voltage of 8000V make it a durable choice for demanding applications.

Specifications

• Channel Count: 1 Channel
• Package/Case: Surface Mount DIP (SMDIP)
• Number of Pins: 4 Pins
• Maximum Forward Current (If): 50mA
• Isolation Voltage: 5kV
• Minimum Current Transfer Ratio (CTR): 80%
• Collector-Emitter Voltage (V(br)ceo): 70V
• Maximum Working Insulation Voltage: 8000V
• Emitter Type: Gallium Arsenide Infrared Diode
• Detector Type: Silicon Phototransistor

With its proven performance from ONSEMI, the FOD817A