ONSEMI MBR1060G Schottky Rectifier Diode - 100

The ONSEMI MBR1060G is a high-performance Schottky barrier rectifier diode, engineered for efficient power conversion. Designed with ON Semiconductor's advanced SWITCHMODE™ technology, it is housed in a robust moulded epoxy case, ensuring durability and reliable operation in demanding environments. All external surfaces are corrosion-resistant, providing enhanced longevity and protection against harsh conditions. A key feature is the integrated guard-ring, which offers superior stress protection, improving the diode's resilience against voltage spikes and thermal stress.

This rectifier is characterised by its exceptionally low forward voltage drop, which significantly reduces power loss and boosts overall system efficiency. Its high surge current capacity ensures reliable performance under transient overload conditions, while the low stored charge, a result of its majority carrier conduction, enables fast switching speeds—making it ideal for high-frequency applications. These attributes combine to deliver a component that excels in power density and thermal management.

Technical Features

• Low Power Loss/High Efficiency: Optimised for energy-saving designs.
• High Surge Capacity: Withstands transient currents for increased reliability.
• Guard-ring Protection: Enhances mechanical and electrical robustness.
• Corrosion-Resistant Construction: Suitable for a wide range of operational environments.
• Fast Switching: Low stored charge enables efficient operation in switching power supplies.

The through-hole TO-220AC package ensures easy mounting and excellent thermal performance, allowing for effective heat dissipation. This makes the MBR1060G a dependable and efficient choice for modern electronic power systems where performance and reliability are critical.

Variant Details

• Size: 100