ONSEMI MJD122T4G NPN Darlington Transistor, 100V 8A, TO-252 DPAK

The ONSEMI MJD122T4G is a general-purpose NPN bipolar power Darlington transistor, designed for applications requiring high current gain and reliable performance. It features a monolithic construction with built-in base-emitter shunt resistors, simplifying circuit design and enhancing stability. As a surface-mount device in a TO-252 (DPAK) package, it serves as a direct replacement for through-hole series such as 2N6040 to 2N6045 and TIP120 to TIP122, facilitating easy migration to modern PCB designs.

This transistor is rated for a collector-emitter voltage (V_BRCEO) of 100V and can handle a continuous DC collector current of 8A, with a power dissipation of 20W. The high DC current gain (h_FE) of up to 1000 minimises the drive current required from preceding stages, making it efficient for power management circuits.

Key Features and Applications

Engineered for industrial and automotive environments, the MJD122T4G is AEC-Q101 qualified and PPAP capable, meeting stringent quality and reliability standards. Its lead is pre-formed for surface-mount applications and supplied in plastic sleeves for automated assembly.

Typical uses include general-purpose amplification, low-to-medium speed switching, motor drivers, solenoid drivers, and linear regulators. The availability of complementary PNP pairs further simplifies the design of push-pull and other symmetrical output stages.

Technical Specifications

• Transistor Type: NPN Bipolar Power Darlington
• Package: TO-252 (DPAK), Surface Mount
• Collector-Emitter Voltage (V_BRCEO): 100V
• Continuous Collector Current (I_C): 8A
• Power Dissipation (P_D): 20W
• DC Current Gain (h_FE): Up to 1000
• Transition Frequency (f_T): 4MHz
• Maximum Operating Temperature: 150°C
• Pin Count: 3 Pins

Offering robust performance in