
High-speed low-side gate driver for MOSFETs, 4.5V-18V supply, 1.4A output, SOT-23 package from ONSEMI.
The ONSEMI FAN3111ESX is a high-speed, low-side gate driver designed to drive N-channel enhancement-mode MOSFETs in low-side switching applications. Its dual CMOS inputs allow configuration as non-inverting or inverting with an enable function, while a single non-inverting, low-voltage input ensures compatibility with low-voltage controllers. The driver's small SOT-23 footprint facilitates distributed drivers for parallel power devices, making it ideal for space-constrained designs.
With a typical rise time of 9ns and fall time of 8ns when driving a 470pF load, this driver enables fast switching and improved efficiency. The supply voltage range of 4.5V to 18V provides flexibility across various power systems. It delivers a source and sink current of 1.4A, ensuring robust drive capability for MOSFET gates.
The FAN3111ESX features an output delay of 15ns and operates over a temperature range of -40°C to +125°C, making it suitable for demanding environments. The dual CMOS inputs with thresholds referenced to VDD are designed for use with PWM controllers and other input-signal sources operating from the same supply voltage as the driver. Additionally, the driver includes a DC input VXREF for an external reference voltage in the range of 2V to 5V, offering precise threshold control.
Applications
This gate driver is ideal for power management systems and motor drive control, delivering reliable performance in a compact, surface-mount package.
Specifications
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