ONSEMI N Channel Power MOSFET, 100 V, 1.7 A, SOT-223

This ONSEMI N-channel enhancement-mode Power MOSFET is produced using advanced planar stripe and DMOS technology. This technology has been specifically tailored to reduce ON-state resistance, whilst providing superior switching performance and high avalanche energy strength.

Designed for reliability, the device is 100% avalanche tested and features a typical low gate charge of 5.8nC alongside a typical low Crss of 10pF. These characteristics ensure efficient and rapid switching capabilities, making it highly effective for demanding electronic circuits.

With a drain source voltage of 100V and a continuous drain current of 1.7A, this MOSFET is suitable for a variety of power management tasks. The surface mount SOT-223 package style features 4 pins and offers a compact footprint, with product dimensions of 43 mm in height, 33 mm in width, and 15 mm in depth. Weighing just 0.124 grams, it is ideal for space-constrained PCB layouts.

Key Specifications

• Channel Type: N Channel
• Drain Source Voltage (Vds): 100V
• Continuous Drain Current (Id): 1.7A
• Drain Source On-State Resistance: 0.35 ohm
• Transistor Case Style: SOT-223
• Transistor Mounting: Surface Mount
• Rds(on) Test Voltage: 10V
• Gate Source Threshold Voltage Max: 2V
• Power Dissipation: 2W
• No. of Pins: 4
• Operating Temperature Max: 150°C