
ONSEMI N Channel Power MOSFET, 200V, 19A, 0.17ohm, TO-220. Ideal for switched mode power supplies, PFC and lamp ballasts.
The ONSEMI N Channel Power MOSFET is produced using advanced planar stripe and DMOS technology. This QFET® MOSFET technology has been specifically tailored to reduce on-state resistance and to provide high avalanche energy strength, making it highly reliable for demanding electronic applications.
Designed for efficiency and robust performance, this MOSFET features a low gate charge of 40.5nC (typical) and a low Crss of 85pF (typical). It is 100% avalanche tested and supports a gate to source voltage of ±30V, ensuring dependable operation under various conditions. With a thermal resistance of 62.5°C/W from junction to ambient and 0.9°C/W from junction to case, it efficiently manages heat dissipation during operation.
Key Specifications
Applications
This power MOSFET is suitable for use in switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Its through-hole mounting and 3-pin configuration make it straightforward to integrate into your circuit designs.
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