ONSEMI N Channel Power MOSFET, 50V, 200mA, SOT-23 SMD

The ONSEMI N Channel Power MOSFET is engineered for low voltage applications, featuring a low threshold voltage that ensures efficient switching performance. This component is designed to deliver reliable power management in a compact form factor, making it a practical choice for modern electronic circuits where space and efficiency are critical.

Featuring a miniature surface mount package (SOT-23), this MOSFET significantly saves board space, allowing for denser and more efficient PCB layouts. The surface mount design facilitates automated assembly processes, enhancing manufacturing productivity. Measuring 43 mm in height, 33 mm in width, and 15 mm in depth, with a weight of just 0.006 grams, this component is exceptionally lightweight and compact for easy integration.

Key Specifications

• Channel Type: N Channel
• Drain Source Voltage (Vds): 50V
• Continuous Drain Current (Id): 200mA
• Drain Source On State Resistance: 3.5 ohm
• Gate Source Threshold Voltage Max: 500mV
• Rds(on) Test Voltage: 2.75V
• Power Dissipation: 225mW
• Continuous Gate-to-Source Voltage: ±20VDC
• Junction-to-Ambient Thermal Resistance: 556°C/W
• Operating Temperature Max: 150°C
• Number of Pins: 3

The robust design ensures reliable operation within a maximum temperature of 150°C and offers a power dissipation of 225mW. With a continuous gate-to-source voltage of ±20VDC, it provides stable and consistent performance. This MOSFET is perfectly suited for applications in power management, consumer electronics, computers, and computer peripherals.