ONSEMI N Channel Power MOSFET, 600V, 4.5A, 2.5 ohm, TO-220F

The ONSEMI N Channel Power MOSFET is produced using advanced planar stripe and DMOS technology. This enhancement mode device has been specifically tailored to minimise on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation mode.

Designed for general usage, this MOSFET is well suited for a variety of high-efficiency applications. It offers low gate charge, lower conduction loss, and switching loss improvements, making it an excellent choice for demanding circuit designs. Furthermore, it is 100% avalanche tested, ensuring improved system reliability in PFC and soft switching topologies.

Key Features

• Advanced planar stripe and DMOS technology
• Minimised on-state resistance
• Superior switching performance
• High energy pulse tolerance in avalanche and commutation mode
• Low gate charge and lower conduction loss
• 100% avalanche tested

Whether you are designing high efficient switched mode power supplies, active power factor correction systems, or electronic lamp ballasts based on half bridge topology, this MOSFET provides a reliable and efficient solution.