ONSEMI NPN Bipolar Power Transistor TO-3 200V

The ONSEMI Silicon NPN Bipolar Power Transistor is designed for high power audio, disk head positioners, and other linear applications. Offering robust performance, this component features a high DC current gain and a high safe operating area, ensuring reliable operation in demanding circuits.

With a maximum collector-emitter voltage of 200V and a continuous collector current of 16A, this transistor provides substantial power handling capabilities. It boasts a power dissipation of 250W and a minimum DC current gain (hFE) of 60, making it suitable for heavy-duty tasks. The transition frequency is rated at 4MHz, and the device can operate at temperatures up to 200°C.

Encased in a TO-3 style package, this through-hole mounting transistor features 2 pins for straightforward installation. The compact design measures 43 mm in height, 33 mm in width, and 15 mm in depth, with a lightweight construction of just 11.5 grams.

Key Specifications:

• Polarity: NPN
• Collector Emitter Voltage Max: 200V
• Collector-Base Voltage (Vcbo): 350V
• Emitter-Base Voltage (Vebo): 5V
• Continuous Collector Current: 16A
• Power Dissipation: 250W
• DC Current Gain hFE Min: 60
• Transition Frequency: 4MHz