ONSEMI NTR4101PT1G P-Channel Power MOSFET, -20V, 3.2A, SOT-23

The ONSEMI NTR4101PT1G is a P-channel Trench Power MOSFET designed for efficient power management in compact electronic designs. It offers a drain-source voltage of -20V and a continuous drain current of -2.4A, making it a robust solution for a variety of modern applications where space and performance are critical.

Engineered with leading -20V Trench technology, this MOSFET provides exceptionally low on-state resistance (RDS(ON)), which minimises power loss and improves overall system efficiency. It is rated for a low gate drive voltage of -1.8V, allowing for compatibility with common low-voltage logic circuits and simplifying design integration.

Housed in a surface-mount SOT-23 package, this component is ideal for achieving a small PCB footprint in densely populated boards. It is constructed with halogen-free materials, adhering to modern environmental standards. The device operates reliably across a broad temperature range from -55°C to 150°C, ensuring stable performance in demanding conditions.

Key Applications

• Power Management: For efficient switching and regulation in power supply circuits.
• Computing & Peripherals: Suitable for load switching in motherboards, notebooks, and external devices.
• Portable Devices: Ideal for battery protection circuits and power management in smartphones, tablets, and wearables.
• Charging Circuits: Used to manage power flow in battery charging systems.
• Industrial Electronics: Provides reliable switching for various control and automation systems.

This MOSFET combines advanced semiconductor technology with a practical, space-saving form factor, delivering the performance needed for next-generation portable, computing, and industrial applications.