ONSEMI Power MOSFET, P-Channel, 30V 3.5A, SOT-23

The ONSEMI NTR4171PT1G is a high-performance P-channel Power MOSFET designed for modern electronic applications. It offers a drain-source voltage of -30V and a continuous drain current of -2.2A, making it an efficient choice for managing power in compact devices.

Engineered with low RDS(ON) at low gate voltage and a low threshold voltage, this component ensures minimal power loss and high efficiency, which is crucial for preserving battery life. Its high power and current handling capability allows it to perform reliably under demanding conditions, supported by a wide operating junction temperature range of -55°C to 150°C.

Key Features & Applications

This MOSFET is optimised for load switching and is particularly suited for battery and load management in portable equipment. Its primary applications include power management in smartphones, PDAs, media players, and various multimedia and industrial portable devices. The surface-mount SOT-23 package makes it ideal for space-constrained printed circuit board (PCB) designs.

Technical Specifications

• Channel Type: P-Channel
• Drain-Source Voltage (Vds): 30V
• Continuous Drain Current (Id): 3.5A
• Drain-Source On-State Resistance (Rds(on)): 0.075 ohm
• Package / Case Style: SOT-23
• Mounting Type: Surface Mount
• Rds(on) Test Voltage: 10V
• Gate-Source Threshold Voltage (Max): 1.15V
• Power Dissipation: 1.25W
• Number of Pins: 3
• Maximum Operating Temperature: 150°C

With its robust construction and reliable performance metrics, the ONSEMI NTR4171PT1G provides a dependable solution for enhancing power efficiency and management in your electronic designs.