ONSEMI P Channel Power MOSFET 40V 8.2A 0.027 ohm SOIC

This ONSEMI P Channel PowerTrench® MOSFET is designed to minimise on-state resistance and maintain low gate charge for efficient switching performance. It combines small gate charge (QG), small reverse recovery charge (Qrr), and a soft reverse recovery body diode, contributing to fast switching for synchronous rectification in AC/DC power supplies.

The device employs a shielded-gate structure that provides charge balance. The soft body diode performance helps minimise undesirable voltage spikes in synchronous rectification, which can eliminate the need for a snubber circuit or allow the replacement of MOSFETs requiring higher voltage ratings. This provides greater flexibility in circuit design and component selection.

Key Features

• PowerTrench® technology for low RDS(on)
• High power and current handling capability
• Shielded-gate structure for charge balance
• Soft reverse recovery body diode to reduce voltage spikes

Featuring a compact SOIC package with product dimensions of 43 mm in height, 33 mm in width, and 15 mm in depth, and weighing just 0.247 grams, this surface-mount component integrates easily into various setups. It is a general-usage component suitable for many different applications requiring reliable power switching and synchronous rectification.