Power MOSFET N Channel 100V 46A TO-220AB
IRF3710PBF N-channel MOSFET: 100V, 46A, ultra-low 0.023Ω on-resistance, TO-220AB. Ideal for power management applications.
The IRF3710PBF from Infineon is a single N-channel Advanced HEXFET® Power MOSFET designed for high-efficiency power management. Utilising advanced processing techniques, this device delivers ultra-low on-resistance per silicon area, enabling reduced conduction losses and improved thermal performance.
Engineered for fast switching and rugged operation, this MOSFET features a dynamic dV/dt rating and is fully avalanche rated, ensuring reliable performance in demanding environments. With an operating temperature range up to 175°C, it is suitable for applications requiring high reliability under thermal stress.
Key Features
- Advanced process technology for exceptional efficiency
- Ultra-low on-resistance of 0.023 ohm
- Dynamic dV/dt rating for enhanced robustness
- Fully avalanche rated for high-energy pulse handling
- Operating temperature up to 175°C
Technical Specifications
- Channel Type: N Channel
- Drain Source Voltage (Vds): 100V
- Continuous Drain Current (Id): 46A
- Rds(on) Test Voltage: 10V
- Gate Source Threshold Voltage Max: 4V
- Power Dissipation: 150W
- Transistor Case Style: TO-220AB
- Mounting Type: Through Hole
- Number of Pins: 3
- Dimensions: Height 43mm, Width 33mm, Depth 15mm
- Weight: 2g
This power MOSFET is an efficient and reliable solution for a wide range of power conversion and switching applications, delivering consistent performance in a compact and industry-standard package.
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