Power MOSFET N Channel 100V 7.5A SOIC Surface Mount

The onsemi FDS3672 is an N-channel MOSFET built using the advanced PowerTrench® process, designed to deliver high efficiency and reliable performance in demanding power applications. This surface-mount transistor is housed in a compact SOIC package, ideal for modern, space-constrained electronic assemblies.

The device is engineered for high-frequency operation, featuring low Miller charge and an optimized body diode with low QRR, which helps minimize switching losses and improve overall system efficiency. The FDS3672 is capable of handling both single and repetitive pulse UIS (Unclamped Inductive Switching) events, making it a sturdy choice for robust power designs.

With a drain-source voltage rating of 100 V, a continuous drain current of 7.5 A, and a low on-state resistance of just 0.023 ohm, this MOSFET ensures excellent power handling and minimal conduction losses. It is suitable for a variety of applications including high-voltage synchronous rectifiers, DC-to-DC converters, off-line UPS systems, distributed power architectures, VRMs, and primary switches for 24V and 48V systems.

Key Features & Benefits

• Low Miller charge for reduced switching losses.
• Low QRR body diode for improved efficiency.
• Optimized for high-frequency operation.
• UIS capability for robust performance under stress.

Typical Applications

Whether used in power supplies, battery chargers, or industrial electronics, the FDS3672 provides the performance and reliability required for high-efficiency power conversion and management.