Power MOSFET N Channel 55 V 98 A TO-247AC Through Hole

The Power MOSFET N Channel 55 V 98 A TO-247AC Through Hole is a high-performance component engineered for demanding power applications. Utilising advanced processing techniques, this device achieves extremely low on-resistance per silicon area, ensuring efficient power handling and reduced energy losses. Combined with fast switching speed and a ruggedised design, this HEXFET power MOSFET delivers exceptional reliability and efficiency across a wide range of uses.

Key Features

• Dynamic dv/dt rating for enhanced robustness
• Fully avalanche rated for reliable operation in harsh conditions
• Advanced process technology for optimised performance
• Ultra low on-resistance for improved energy efficiency
• Fast switching capability for high-frequency applications

Technical Specifications

• Channel Type: N Channel
• Drain Source Voltage Vds: 55 V
• Continuous Drain Current Id: 98 A
• Drain Source On State Resistance: 8000 µohm
• Rds(on) Test Voltage: 10 V
• Gate Source Threshold Voltage Max: 4 V
• Power Dissipation: 150 W
• Transistor Mounting: Through Hole
• No. of Pins: 3 Pins
• Operating Temperature Max: 175 °C

This MOSFET is designed for through-hole mounting (TO-247AC package), facilitating easy integration into a wide variety of circuits. Its robust construction and advanced features make it a reliable choice for engineers seeking high efficiency and durability in their power management solutions. Whether used in switch-mode power supplies, motor control circuits, or other power conversion applications, this component delivers consistent performance you can depend on.